Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...

The 23LCV512 is a 512 kbit SPI serial static random-acess memory (SRAM) with battery backup and SDI interface. This device features uses low power CMOS technology and features unlimited read and write ...

Is it possible to reduce the power consumed by memory by 50%? Yes, but it requires work in the memory and at the architecture level. Memory consumes about 50% or more of the area and about 50% of the ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

The use of RFID and contactless smart card technology is exploding and devices (e.g. tags, tokens, cards) all require embedded memory arrays that suit the needs of the application. All of these ...