Abstract: To suppress transient voltage spikes across the ac-side MOSFET in cycloconverter-based dc–ac converters, this article proposes a secondary-side modulation (SSM) method that synchronizes ...
A new technical paper titled “Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes” was published by researchers at Samsung and Seoul National University. Find the ...
Abstract: Silicon carbide (SiC) devices are becoming widely used in emerging power electronics application such as aerospace and automotive traction inverters due to their power density and efficient ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
If the car battery terminals are reverse connected during a jump start, vehicle upkeep, or repair, components in the associated automotive electronics modules may be damaged if they cannot handle the ...
For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...
SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
USTC team reports 2 kV/0.45 mΩ·cm 2 PiN diode with surge energy density of 282 J/cm 2 Researchers from University of Science and Technology of China (USTC) have developed a 2 kV/0.45 mΩ·cm 2 vertical ...
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